Pulsed 193 nm Excimer laser processing of 4H–SiC (0001) wafers with radiant exposure dependent in situ reflectivity studies for process optimization

  1. Menduiña, A.P.
  2. Doval, A.F.
  3. Delmdahl, R.
  4. Martin, E.
  5. Kant, K.
  6. Alonso-Gómez, J.L.
  7. Chiussi, S.
Revista:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Any de publicació: 2023

Volum: 168

Tipus: Article

DOI: 10.1016/J.MSSP.2023.107839 GOOGLE SCHOLAR lock_openAccés obert editor
Font de les dades: Scopus