Pulsed 193 nm Excimer laser processing of 4H–SiC (0001) wafers with radiant exposure dependent in situ reflectivity studies for process optimization
- Menduiña, A.P.
- Doval, A.F.
- Delmdahl, R.
- Martin, E.
- Kant, K.
- Alonso-Gómez, J.L.
- Chiussi, S.
Revista:
Materials Science in Semiconductor Processing
ISSN: 1369-8001
Any de publicació: 2023
Volum: 168
Tipus: Article