Estudio, caracterización y modelado avanzado de los efectos térmicos y trampa en los Transistores MESFET y HEMT de Microondas
- Chaibi, Mohamed
- Tomás Fernández Ibáñez Doktorvater/Doktormutter
Universität der Verteidigung: Universidad de Cantabria
Fecha de defensa: 22 von Januar von 2010
- Ángel Mediavilla Sánchez Präsident/in
- Antonio Tazón Puente Sekretär/in
- Teresa María Martin Guerrero Vocal
- Mónica Fernández Barciela Vocal
- Joaquin Portilla Rubín Vocal
Art: Dissertation
Zusammenfassung
In this thesis, a new nonlinear model of GaAs and GaN MESFET/HEMT transistors including thermal and traps effects shown in this kind of devices has been presented. The model, along with an electric equivalent circuit and an especial extraction process strategy, can accurately predict the DC, pulsed as well as the small and large signal behaviour of the device over a large range of ambient temperature. To model drain to source current source Ids we start with a known DC equation but the approach can be applied to any other existing classical model. The model parameters values are extracted from the DC and pulsed I/V characteristics carried out just at a few bias points. A study and characterization of thermal and traps effects is presented too. This allows us to know the influence of these effects on the transistor behaviour, and to obtain all the necessary information for their modelling