Dopant-driven enhancements in the optoelectronic properties of laser ablated ZnO: Ga thin films

  1. Hassan, A.
  2. Jin, Y.
  3. Chao, F.
  4. Irfan, M.
  5. Jiang, Y.
Aldizkaria:
Journal of Applied Physics

ISSN: 1089-7550,  0021-8979

Argitalpen urtea: 2018

Alea: 123

Zenbakia: 16

Mota: Artikulua

DOI: 10.1063/1.5003686 GOOGLE SCHOLAR
Datuen iturria: Scopus