Finite elements analysis of heteroepitaxial SiGe layers grown by excimer laser

  1. Conde, J.C.
  2. González, P.
  3. Lusquiños, F.
  4. Chiussi, S.
  5. Serra, J.
  6. León, B.
Journal:
Applied Surface Science

ISSN: 0169-4332

Year of publication: 2005

Volume: 248

Issue: 1-4

Pages: 461-465

Type: Conference paper

DOI: 10.1016/J.APSUSC.2005.03.099 GOOGLE SCHOLAR
Data source: Scopus