Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)
- Conde, J.C.
- Martín, E.
- Gontad, F.
- Chiussi, S.
- Fornarini, L.
- León, B.
ISSN: 0040-6090
Datum der Publikation: 2010
Ausgabe: 518
Nummer: 9
Seiten: 2431-2436
Art: Artikel