Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

1. Conde, J.C.
2. Martín, E.
3. Gontad, F.
4. Chiussi, S.
5. Fornarini, L.
6. León, B.