Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

  1. Conde, J.C.
  2. Martín, E.
  3. Gontad, F.
  4. Chiussi, S.
  5. Fornarini, L.
  6. León, B.
Aldizkaria:
Thin Solid Films

ISSN: 0040-6090

Argitalpen urtea: 2010

Alea: 518

Zenbakia: 9

Orrialdeak: 2431-2436

Mota: Artikulua

DOI: 10.1016/J.TSF.2009.09.135 GOOGLE SCHOLAR

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