STEFANO
CHIUSSI
TITULAR DE UNIVERSIDADE - TEMPO COMPLETO
University of Stuttgart
Stuttgart, AlemaniaPublicacións en colaboración con investigadores/as de University of Stuttgart (10)
2021
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Raman shifts in MBE-grown SixGex1 − − ySny alloys with large Si content
Journal of Raman Spectroscopy, Vol. 52, Núm. 6, pp. 1167-1175
2019
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Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 37, Núm. 6
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Fabrication of GepB-alloys by means of pulsed laser induced epitaxy
2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings
2017
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Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy
2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017 - Proceedings
2016
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Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling
Physical Review B, Vol. 94, Núm. 24
2015
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Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy
Applied Physics Letters, Vol. 107, Núm. 26
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Growth and characterization of SiGeSn quantum well photodiodes
Optics Express, Vol. 23, Núm. 19, pp. 25048-25057
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Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis
Journal of Applied Physics, Vol. 117, Núm. 12
2014
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Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
Applied Physics Letters, Vol. 105, Núm. 22
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Spin accumulation in n-Ge on Si with sputtered Mn5Ge 3C0.8-contacts
2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014