Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy

  1. Schlipf, J.
  2. Martín, E.
  3. Stchakovsky, M.
  4. Benedetti, A.
  5. Fischer, I.A.
  6. Schulze, J.
  7. Chiussi, S.
Revista:
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

ISSN: 2166-2754,  2166-2746

Ano de publicación: 2019

Volume: 37

Número: 6

Tipo: Artigo

DOI: 10.1116/1.5122777 GOOGLE SCHOLAR

Obxectivos de Desenvolvemento Sustentable

Fonte de datos: Scopus