Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy

  1. Schlipf, J.
  2. Martín, E.
  3. Stchakovsky, M.
  4. Benedetti, A.
  5. Fischer, I.A.
  6. Schulze, J.
  7. Chiussi, S.
Zeitschrift:
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

ISSN: 2166-2754,  2166-2746

Datum der Publikation: 2019

Ausgabe: 37

Nummer: 6

Art: Artikel

DOI: 10.1116/1.5122777 GOOGLE SCHOLAR
Datenquelle: Scopus