Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy

  1. Schlipf, J.
  2. Martín, E.
  3. Stchakovsky, M.
  4. Benedetti, A.
  5. Fischer, I.A.
  6. Schulze, J.
  7. Chiussi, S.
Aldizkaria:
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

ISSN: 2166-2754,  2166-2746

Argitalpen urtea: 2019

Alea: 37

Zenbakia: 6

Mota: Artikulua

DOI: 10.1116/1.5122777 GOOGLE SCHOLAR
Datuen iturria: Scopus