Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy

  1. Schlipf, J.
  2. Martín, E.
  3. Stchakovsky, M.
  4. Benedetti, A.
  5. Fischer, I.A.
  6. Schulze, J.
  7. Chiussi, S.
Revista:
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

ISSN: 2166-2754,  2166-2746

Any de publicació: 2019

Volum: 37

Número: 6

Tipus: Article

DOI: 10.1116/1.5122777 GOOGLE SCHOLAR

Objectius de Desenvolupament Sostenible

Font de les dades: Scopus