Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy

  1. Schlipf, J.
  2. Martín, E.
  3. Stchakovsky, M.
  4. Benedetti, A.
  5. Fischer, I.A.
  6. Schulze, J.
  7. Chiussi, S.
Revue:
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

ISSN: 2166-2754,  2166-2746

Année de publication: 2019

Volumen: 37

Número: 6

Type: Article

DOI: 10.1116/1.5122777 GOOGLE SCHOLAR

Objectifs de Développement Durable

La source de données: Scopus