Publicacións en colaboración con investigadores/as de University of Stuttgart (17)

2024

  1. Lead-Free Halide Perovskite Materials and Optoelectronic Devices: Progress and Prospective

    Advanced Functional Materials, Vol. 34, Núm. 6

2022

  1. Emerging Approaches to DNA Data Storage: Challenges and Prospects

    ACS Nano, Vol. 16, Núm. 11, pp. 17552-17571

  2. Recent Progress in Mixed A-Site Cation Halide Perovskite Thin-Films and Nanocrystals for Solar Cells and Light-Emitting Diodes

    Advanced Optical Materials, Vol. 10, Núm. 14

2021

  1. Defect Passivation in Lead-Halide Perovskite Nanocrystals and Thin Films: Toward Efficient LEDs and Solar Cells

    Angewandte Chemie - International Edition, Vol. 60, Núm. 40, pp. 21636-21660

  2. Insights on toxicity, safe handling and disposal of silica aerogels and amorphous nanoparticles

    Environmental Science: Nano, Vol. 8, Núm. 5, pp. 1177-1195

  3. Raman shifts in MBE-grown SixGex1 − − ySny alloys with large Si content

    Journal of Raman Spectroscopy, Vol. 52, Núm. 6, pp. 1167-1175

2019

  1. Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 37, Núm. 6

  2. Fabrication of GepB-alloys by means of pulsed laser induced epitaxy

    2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings

2018

  1. A dynamical model for the generation of H2 in microhydrated Al clusters

    International Journal of Hydrogen Energy, Vol. 43, Núm. 52, pp. 23285-23298

2017

  1. Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy

    2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017 - Proceedings

2016

  1. Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling

    Physical Review B, Vol. 94, Núm. 24

2015

  1. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    Applied Physics Letters, Vol. 107, Núm. 26

  2. Growth and characterization of SiGeSn quantum well photodiodes

    Optics Express, Vol. 23, Núm. 19, pp. 25048-25057

  3. Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis

    Journal of Applied Physics, Vol. 117, Núm. 12

2014

  1. Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si

    Applied Physics Letters, Vol. 105, Núm. 22

  2. Spin accumulation in n-Ge on Si with sputtered Mn5Ge 3C0.8-contacts

    2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

  3. Tunneling above the crossover temperature

    Journal of Physical Chemistry A, Vol. 118, Núm. 1, pp. 78-82