Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

  1. Oliveira, F.
  2. Fischer, I.A.
  3. Benedetti, A.
  4. Zaumseil, P.
  5. Cerqueira, M.F.
  6. Vasilevskiy, M.I.
  7. Stefanov, S.
  8. Chiussi, S.
  9. Schulze, J.
Revista:
Applied Physics Letters

ISSN: 0003-6951

Any de publicació: 2015

Volum: 107

Número: 26

Tipus: Article

DOI: 10.1063/1.4938746 GOOGLE SCHOLAR