Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

  1. Oliveira, F.
  2. Fischer, I.A.
  3. Benedetti, A.
  4. Zaumseil, P.
  5. Cerqueira, M.F.
  6. Vasilevskiy, M.I.
  7. Stefanov, S.
  8. Chiussi, S.
  9. Schulze, J.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2015

Volumen: 107

Número: 26

Type: Article

DOI: 10.1063/1.4938746 GOOGLE SCHOLAR