Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

  1. Oliveira, F.
  2. Fischer, I.A.
  3. Benedetti, A.
  4. Zaumseil, P.
  5. Cerqueira, M.F.
  6. Vasilevskiy, M.I.
  7. Stefanov, S.
  8. Chiussi, S.
  9. Schulze, J.
Aldizkaria:
Applied Physics Letters

ISSN: 0003-6951

Argitalpen urtea: 2015

Alea: 107

Zenbakia: 26

Mota: Artikulua

DOI: 10.1063/1.4938746 GOOGLE SCHOLAR