STEFANO CHIUSSI-rekin lankidetzan egindako argitalpenak (8)

2024

  1. Lateral flow assays: Progress and evolution of recent trends in point-of-care applications

    Materials Today Bio, Vol. 28

2023

  1. Pulsed 193 nm Excimer laser processing of 4H–SiC (0001) wafers with radiant exposure dependent in situ reflectivity studies for process optimization

    Materials Science in Semiconductor Processing, Vol. 168

2019

  1. Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 37, Núm. 6

2012

  1. FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films

    Applied Surface Science

2011

  1. FEM for modelling 193 nm excimer laser treatment of SiO2/Si/Si(1-x)Gex heterostructures on SOI substrates

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, Núm. 3, pp. 936-939

2010

  1. Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures

    Applied Physics Letters, Vol. 97, Núm. 1

  2. Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

    Thin Solid Films, Vol. 518, Núm. 9, pp. 2431-2436

  3. Numerical studies of temperature profile and hydrodynamic phenomena during excimer laser assisted heteroepitaxial growth of patterned silicon and germanium bi-layers

    Thin Solid Films, Vol. 518, Núm. 6 SUPPL. 1