Pulsed 193 nm Excimer laser processing of 4H–SiC (0001) wafers with radiant exposure dependent in situ reflectivity studies for process optimization

  1. Menduiña, A.P.
  2. Doval, A.F.
  3. Delmdahl, R.
  4. Martin, E.
  5. Kant, K.
  6. Alonso-Gómez, J.L.
  7. Chiussi, S.
Revista:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Ano de publicación: 2023

Volume: 168

Tipo: Artigo

DOI: 10.1016/J.MSSP.2023.107839 GOOGLE SCHOLAR lock_openAcceso aberto editor
Fonte de datos: Scopus