Pulsed 193 nm Excimer laser processing of 4H–SiC (0001) wafers with radiant exposure dependent in situ reflectivity studies for process optimization

  1. Menduiña, A.P.
  2. Doval, A.F.
  3. Delmdahl, R.
  4. Martin, E.
  5. Kant, K.
  6. Alonso-Gómez, J.L.
  7. Chiussi, S.
Zeitschrift:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Datum der Publikation: 2023

Ausgabe: 168

Art: Artikel

DOI: 10.1016/J.MSSP.2023.107839 GOOGLE SCHOLAR lock_openOpen Access editor
Datenquelle: Scopus