Pulsed 193 nm Excimer laser processing of 4H–SiC (0001) wafers with radiant exposure dependent in situ reflectivity studies for process optimization

  1. Menduiña, A.P.
  2. Doval, A.F.
  3. Delmdahl, R.
  4. Martin, E.
  5. Kant, K.
  6. Alonso-Gómez, J.L.
  7. Chiussi, S.
Aldizkaria:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Argitalpen urtea: 2023

Alea: 168

Mota: Artikulua

DOI: 10.1016/J.MSSP.2023.107839 GOOGLE SCHOLAR lock_openSarbide irekia editor
Datuen iturria: Scopus