Pulsed 193 nm Excimer laser processing of 4H–SiC (0001) wafers with radiant exposure dependent in situ reflectivity studies for process optimization

  1. Menduiña, A.P.
  2. Doval, A.F.
  3. Delmdahl, R.
  4. Martin, E.
  5. Kant, K.
  6. Alonso-Gómez, J.L.
  7. Chiussi, S.
Revue:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Année de publication: 2023

Volumen: 168

Type: Article

DOI: 10.1016/J.MSSP.2023.107839 GOOGLE SCHOLAR lock_openAccès ouvert editor
La source de données: Scopus