Pulsed 193 nm Excimer laser processing of 4H–SiC (0001) wafers with radiant exposure dependent in situ reflectivity studies for process optimization

  1. Menduiña, A.P.
  2. Doval, A.F.
  3. Delmdahl, R.
  4. Martin, E.
  5. Kant, K.
  6. Alonso-Gómez, J.L.
  7. Chiussi, S.
Journal:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Year of publication: 2023

Volume: 168

Type: Article

DOI: 10.1016/J.MSSP.2023.107839 GOOGLE SCHOLAR lock_openOpen access editor
Data source: Scopus