Alessandro Benedetti-rekin lankidetzan egindako argitalpenak (14)

2019

  1. Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 37, Núm. 6

2016

  1. (Si)GeSn nanostructures for optoelectronic device applications

    2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2016 - Proceedings

  2. Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling

    Physical Review B, Vol. 94, Núm. 24

2013

  1. Tensely strained GeSn alloys as optical gain media

    Applied Physics Letters, Vol. 103, Núm. 19

2006

  1. UV excimer laser assisted heteroepitaxy of (Si)GeSn on Si(100)

    SiGe and Ge: materials, processing, and devices (Electrochemical Society), pp. 115-125