CINTECX
Centro de investigación
Carmen
Serra Rodríguez
Publicacións nas que colabora con Carmen Serra Rodríguez (32)
2019
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Fabrication of GepB-alloys by means of pulsed laser induced epitaxy
2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings
2017
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Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy
2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017 - Proceedings
2016
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193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns
Applied Surface Science, Vol. 362, pp. 217-220
2014
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Structure and composition of Silicon-Germanium-Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy
Microelectronic Engineering, Vol. 125, pp. 18-21
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UV excimer laser assisted heteroepitaxy of (Si)GeSn on Si(100)
ECS Transactions
2012
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Laser assisted formation of binary and ternary Ge/Si/Sn alloys
Thin Solid Films
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Laser synthesis of germanium tin alloys on virtual germanium
Applied Physics Letters, Vol. 100, Núm. 10
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Pulsed laser deposition of strontium-substituted hydroxyapatite coatings
Applied Surface Science
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Silicon germanium tin alloys formed by pulsed laser induced epitaxy
Applied Physics Letters, Vol. 100, Núm. 20
2011
2010
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A copper(II) thiosemicarbazone complex built on gold for the immobilization of lipase and laccase
Journal of Colloid and Interface Science, Vol. 348, Núm. 1, pp. 96-100
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Amorphous silicon thin-film solar cells deposited on flexible substrates using different zinc oxide layers
Physica Status Solidi (C) Current Topics in Solid State Physics
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Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures
Applied Physics Letters, Vol. 97, Núm. 1
2008
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A growth rate, structure and surface morphology study of Si1-x-yGexCy films deposited by ArF-LCVD in tilted geometry
Vacuum, Vol. 82, Núm. 12, pp. 1525-1528
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Growth and modification of thin a-Si:H/a-Ge:H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processing
Applied Surface Science, Vol. 254, Núm. 19, pp. 6030-6033
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Microstructure of the passive layer formed on AA2024-T3 aluminum alloy surface implanted with nitrogen
Surface and Interface Analysis, Vol. 40, Núm. 3-4, pp. 290-293
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Pulsed laser deposition of silicon-substituted hydroxyapatite coatings
Vacuum, Vol. 82, Núm. 12, pp. 1383-1385
2006
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Microscopía electrónica de alta resolución de recubrimietos de SiGeC producidos mediante técnicas láser
Perspectiva de la investigación sobre materiales en España en el siglo XXI
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The effect of the Cerium ion implantation in the passive films properties of a duplex stainless steel
Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers (Elsevier), pp. 47-52
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UV excimer laser assisted heteroepitaxy of (Si)GeSn on Si(100)
SiGe and Ge: materials, processing, and devices (Electrochemical Society), pp. 115-125