Publicacións nas que colabora con Jörg Schulze (17)

2021

  1. Raman shifts in MBE-grown SixGex1 − − ySny alloys with large Si content

    Journal of Raman Spectroscopy, Vol. 52, Núm. 6, pp. 1167-1175

2019

  1. Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 37, Núm. 6

  2. Fabrication of GepB-alloys by means of pulsed laser induced epitaxy

    2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings

2017

  1. Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy

    2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017 - Proceedings

2016

  1. (Si)GeSn nanostructures for optoelectronic device applications

    2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2016 - Proceedings

  2. Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling

    Physical Review B, Vol. 94, Núm. 24

2015

  1. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    Applied Physics Letters, Vol. 107, Núm. 26

  2. Growth and characterization of SiGeSn quantum well photodiodes

    Optics Express, Vol. 23, Núm. 19, pp. 25048-25057

  3. Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis

    Journal of Applied Physics, Vol. 117, Núm. 12

2014

  1. Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si

    Applied Physics Letters, Vol. 105, Núm. 22

  2. Spin accumulation in n-Ge on Si with sputtered Mn5Ge 3C0.8-contacts

    2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

  3. Structure and composition of Silicon-Germanium-Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy

    Microelectronic Engineering, Vol. 125, pp. 18-21

  4. UV excimer laser assisted heteroepitaxy of (Si)GeSn on Si(100)

    ECS Transactions

2012

  1. Laser assisted formation of binary and ternary Ge/Si/Sn alloys

    Thin Solid Films

  2. Laser synthesis of germanium tin alloys on virtual germanium

    Applied Physics Letters, Vol. 100, Núm. 10

  3. Silicon germanium tin alloys formed by pulsed laser induced epitaxy

    Applied Physics Letters, Vol. 100, Núm. 20

2006

  1. UV excimer laser assisted heteroepitaxy of (Si)GeSn on Si(100)

    SiGe and Ge: materials, processing, and devices (Electrochemical Society), pp. 115-125