Alessandro Benedetti-rekin lankidetzan egindako argitalpenak (14)

2019

  1. Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 37, Núm. 6

2016

  1. (Si)GeSn nanostructures for optoelectronic device applications

    2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2016 - Proceedings

  2. Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling

    Physical Review B, Vol. 94, Núm. 24

2015

  1. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    Applied Physics Letters, Vol. 107, Núm. 26

  2. Growth and characterization of SiGeSn quantum well photodiodes

    Optics Express, Vol. 23, Núm. 19, pp. 25048-25057

  3. Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis

    Journal of Applied Physics, Vol. 117, Núm. 12

2014

  1. Structure and composition of Silicon-Germanium-Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy

    Microelectronic Engineering, Vol. 125, pp. 18-21

  2. UV excimer laser assisted heteroepitaxy of (Si)GeSn on Si(100)

    ECS Transactions

2013

  1. Tensely strained GeSn alloys as optical gain media

    Applied Physics Letters, Vol. 103, Núm. 19

2012

  1. Laser assisted formation of binary and ternary Ge/Si/Sn alloys

    Thin Solid Films

  2. Laser synthesis of germanium tin alloys on virtual germanium

    Applied Physics Letters, Vol. 100, Núm. 10

  3. Silicon germanium tin alloys formed by pulsed laser induced epitaxy

    Applied Physics Letters, Vol. 100, Núm. 20

2011

  1. Pulsed UV-laser processing of amorphous and crystalline group IV semiconductors

    ECS Transactions

2006

  1. UV excimer laser assisted heteroepitaxy of (Si)GeSn on Si(100)

    SiGe and Ge: materials, processing, and devices (Electrochemical Society), pp. 115-125