STEFANO
CHIUSSI
TITULAR DE UNIVERSIDADE - TEMPO COMPLETO
Alessandro
Benedetti
Publications dans lesquelles il/elle collabore avec Alessandro Benedetti (14)
2019
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Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 37, Núm. 6
2016
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(Si)GeSn nanostructures for optoelectronic device applications
2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2016 - Proceedings
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Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling
Physical Review B, Vol. 94, Núm. 24
2015
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Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy
Applied Physics Letters, Vol. 107, Núm. 26
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Growth and characterization of SiGeSn quantum well photodiodes
Optics Express, Vol. 23, Núm. 19, pp. 25048-25057
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Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis
Journal of Applied Physics, Vol. 117, Núm. 12
2014
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Structure and composition of Silicon-Germanium-Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy
Microelectronic Engineering, Vol. 125, pp. 18-21
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UV excimer laser assisted heteroepitaxy of (Si)GeSn on Si(100)
ECS Transactions
2013
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Tensely strained GeSn alloys as optical gain media
Applied Physics Letters, Vol. 103, Núm. 19
2012
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Laser assisted formation of binary and ternary Ge/Si/Sn alloys
Thin Solid Films
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Laser synthesis of germanium tin alloys on virtual germanium
Applied Physics Letters, Vol. 100, Núm. 10
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Silicon germanium tin alloys formed by pulsed laser induced epitaxy
Applied Physics Letters, Vol. 100, Núm. 20
2011
2006
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UV excimer laser assisted heteroepitaxy of (Si)GeSn on Si(100)
SiGe and Ge: materials, processing, and devices (Electrochemical Society), pp. 115-125