![Foto de STEFANO](/img/nophoto.png)
STEFANO
CHIUSSI
PROFESOR/A TITULAR DE UNIVERSIDAD TC
Publicaciones (132) Publicaciones de STEFANO CHIUSSI
2024
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Development of robust chiroptical systems through spirobifluorenes
Chirality, Vol. 36, Núm. 1
2023
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Pulsed 193 nm Excimer laser processing of 4H–SiC (0001) wafers with radiant exposure dependent in situ reflectivity studies for process optimization
Materials Science in Semiconductor Processing, Vol. 168
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Review article laser-induced hyperthermia on graphene oxide composites
Journal of Nanobiotechnology, Vol. 21, Núm. 1
2022
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Flexible sensing devices integrating molecularly-imprinted polymers for the detection of 3-nitrotyrosine biomarker
Biosensors and Bioelectronics: X, Vol. 10
2021
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How to sterilize polylactic acid based medical devices?
Polymers, Vol. 13, Núm. 13
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Raman shifts in MBE-grown SixGex1 − − ySny alloys with large Si content
Journal of Raman Spectroscopy, Vol. 52, Núm. 6, pp. 1167-1175
2019
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Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 37, Núm. 6
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Fabrication of GepB-alloys by means of pulsed laser induced epitaxy
2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings
2018
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Device-Compatible Chiroptical Surfaces through Self-Assembly of Enantiopure Allenes
Langmuir, Vol. 34, Núm. 15, pp. 4548-4553
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Structural characterization of bioceramics and mineralized tissues based on Raman and XRD techniques
Ceramics International, Vol. 44, Núm. 1, pp. 495-504
2017
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Ex vivo analysis of the oral epithelium by high-wavenumber Raman spectroscopy
International Journal of Biomedical Engineering and Technology, Vol. 24, Núm. 2, pp. 154-168
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Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy
2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017 - Proceedings
2016
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(Si)GeSn nanostructures for optoelectronic device applications
2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2016 - Proceedings
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193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns
Applied Surface Science, Vol. 362, pp. 217-220
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Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling
Physical Review B, Vol. 94, Núm. 24
2015
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Espectroscopia Raman para el análisis de tejido vivo y biocerámicas de origen biológico y sintético
Biomateriales: diseño, producción y caracterización (Rede Galega de Biomateriais), pp. 33-52
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Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy
Applied Physics Letters, Vol. 107, Núm. 26
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Growth and characterization of SiGeSn quantum well photodiodes
Optics Express, Vol. 23, Núm. 19, pp. 25048-25057
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Lasing in direct-bandgap GeSn alloy grown on Si
Nature Photonics, Vol. 9, Núm. 2, pp. 88-92
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Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis
Journal of Applied Physics, Vol. 117, Núm. 12