Publikationen, an denen er mitarbeitet Stefan Stefanov (19)

2017

  1. Ex vivo analysis of the oral epithelium by high-wavenumber Raman spectroscopy

    International Journal of Biomedical Engineering and Technology, Vol. 24, Núm. 2, pp. 154-168

2015

  1. Espectroscopia Raman para el análisis de tejido vivo y biocerámicas de origen biológico y sintético

    Biomateriales: diseño, producción y caracterización (Rede Galega de Biomateriais), pp. 33-52

  2. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    Applied Physics Letters, Vol. 107, Núm. 26

  3. Growth and characterization of SiGeSn quantum well photodiodes

    Optics Express, Vol. 23, Núm. 19, pp. 25048-25057

  4. Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis

    Journal of Applied Physics, Vol. 117, Núm. 12

2014

  1. Biomineralization of marine-patterned c-scaffolds

    Bioinspired, Biomimetic and Nanobiomaterials, Vol. 3, Núm. 2, pp. 106-114

  2. Dopant profile engineering using ArF excimer laser, flash lamp and spike annealing for junction formation

    Proceedings of the International Conference on Ion Implantation Technology

  3. Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si

    Applied Physics Letters, Vol. 105, Núm. 22

  4. Pilot research on the evaluation and detection of head and neck squamous cell carcinoma by Raman spectroscopy

    Journal of Raman Spectroscopy

  5. Structure and composition of Silicon-Germanium-Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy

    Microelectronic Engineering, Vol. 125, pp. 18-21

  6. UV excimer laser assisted heteroepitaxy of (Si)GeSn on Si(100)

    ECS Transactions

2013

  1. Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

    Journal of Applied Physics, Vol. 113, Núm. 20

2012

  1. FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films

    Applied Surface Science

  2. Laser assisted formation of binary and ternary Ge/Si/Sn alloys

    Thin Solid Films

  3. Laser synthesis of germanium tin alloys on virtual germanium

    Applied Physics Letters, Vol. 100, Núm. 10

  4. Silicon germanium tin alloys formed by pulsed laser induced epitaxy

    Applied Physics Letters, Vol. 100, Núm. 20

2011

  1. Pulsed UV-laser processing of amorphous and crystalline group IV semiconductors

    ECS Transactions

2010

  1. Amorphous silicon thin-film solar cells deposited on flexible substrates using different zinc oxide layers

    Physica Status Solidi (C) Current Topics in Solid State Physics

2006

  1. UV excimer laser assisted heteroepitaxy of (Si)GeSn on Si(100)

    SiGe and Ge: materials, processing, and devices (Electrochemical Society), pp. 115-125