Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

  1. Luong, G.V.
  2. Wirths, S.
  3. Stefanov, S.
  4. Holländer, B.
  5. Schubert, J.
  6. Conde, J.C.
  7. Stoica, T.
  8. Breuer, U.
  9. Chiussi, S.
  10. Goryll, M.
  11. Buca, D.
  12. Mantl, S.
Revista:
Journal of Applied Physics

ISSN: 0021-8979

Ano de publicación: 2013

Volume: 113

Número: 20

Tipo: Artigo

DOI: 10.1063/1.4807001 GOOGLE SCHOLAR