Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

  1. Luong, G.V.
  2. Wirths, S.
  3. Stefanov, S.
  4. Holländer, B.
  5. Schubert, J.
  6. Conde, J.C.
  7. Stoica, T.
  8. Breuer, U.
  9. Chiussi, S.
  10. Goryll, M.
  11. Buca, D.
  12. Mantl, S.
Aldizkaria:
Journal of Applied Physics

ISSN: 0021-8979

Argitalpen urtea: 2013

Alea: 113

Zenbakia: 20

Mota: Artikulua

DOI: 10.1063/1.4807001 GOOGLE SCHOLAR