Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

  1. Luong, G.V.
  2. Wirths, S.
  3. Stefanov, S.
  4. Holländer, B.
  5. Schubert, J.
  6. Conde, J.C.
  7. Stoica, T.
  8. Breuer, U.
  9. Chiussi, S.
  10. Goryll, M.
  11. Buca, D.
  12. Mantl, S.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2013

Volumen: 113

Número: 20

Type: Article

DOI: 10.1063/1.4807001 GOOGLE SCHOLAR