Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

  1. Luong, G.V.
  2. Wirths, S.
  3. Stefanov, S.
  4. Holländer, B.
  5. Schubert, J.
  6. Conde, J.C.
  7. Stoica, T.
  8. Breuer, U.
  9. Chiussi, S.
  10. Goryll, M.
  11. Buca, D.
  12. Mantl, S.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 2013

Volume: 113

Issue: 20

Type: Article

DOI: 10.1063/1.4807001 GOOGLE SCHOLAR