Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing
- Luong, G.V.
- Wirths, S.
- Stefanov, S.
- Holländer, B.
- Schubert, J.
- Conde, J.C.
- Stoica, T.
- Breuer, U.
- Chiussi, S.
- Goryll, M.
- Buca, D.
- Mantl, S.
Journal:
Journal of Applied Physics
ISSN: 0021-8979
Year of publication: 2013
Volume: 113
Issue: 20
Type: Article