Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

  1. Luong, G.V.
  2. Wirths, S.
  3. Stefanov, S.
  4. Holländer, B.
  5. Schubert, J.
  6. Conde, J.C.
  7. Stoica, T.
  8. Breuer, U.
  9. Chiussi, S.
  10. Goryll, M.
  11. Buca, D.
  12. Mantl, S.
Revista:
Journal of Applied Physics

ISSN: 0021-8979

Any de publicació: 2013

Volum: 113

Número: 20

Tipus: Article

DOI: 10.1063/1.4807001 GOOGLE SCHOLAR