Publicacions en què col·labora amb Francisco José Gontad Fariña (13)

2022

  1. Dual pulsed laser deposition of Ag nanoparticles on calcium phosphate coatings for biomedical applications

    Biomedical physics & engineering express, Vol. 8, Núm. 6

2016

  1. 193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns

    Applied Surface Science, Vol. 362, pp. 217-220

2013

  1. Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers

    Thin Solid Films, Vol. 536, pp. 147-151

2011

  1. FEM for modelling 193 nm excimer laser treatment of SiO2/Si/Si(1-x)Gex heterostructures on SOI substrates

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, Núm. 3, pp. 936-939

  2. Pulsed UV-laser processing of amorphous and crystalline group IV semiconductors

    ECS Transactions

2010

  1. Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures

    Applied Physics Letters, Vol. 97, Núm. 1

  2. Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

    Thin Solid Films, Vol. 518, Núm. 9, pp. 2431-2436

  3. Numerical studies of temperature profile and hydrodynamic phenomena during excimer laser assisted heteroepitaxial growth of patterned silicon and germanium bi-layers

    Thin Solid Films, Vol. 518, Núm. 6 SUPPL. 1

2008

  1. Growth and modification of thin a-Si:H/a-Ge:H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processing

    Applied Surface Science, Vol. 254, Núm. 19, pp. 6030-6033

  2. Numerical simulation of the UV-excimer laser assisted modification of amorphous hydrogenated Si/Ge bilayers to graded epitaxial heterostructures

    Thin Solid Films, Vol. 517, Núm. 1, pp. 222-226

2007

  1. Numerical analysis of Excimer laser assisted processing of multi-layers for the tailored dehydrogenation of amorphous and nano-crystalline silicon films

    Applied Surface Science, Vol. 254, Núm. 4, pp. 898-903

2006

  1. Microscopía electrónica de alta resolución de recubrimietos de SiGeC producidos mediante técnicas láser

    Perspectiva de la investigación sobre materiales en España en el siglo XXI

  2. Procesamiento asistido por láser excímero de capas delgadas de silicio-germanio-carbono

    Perspectiva de la investigación sobre materiales en España en el siglo XXI