Publicaciones en las que colabora con Jorge Carlos Conde Saa (22)

2016

  1. 193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns

    Applied Surface Science, Vol. 362, pp. 217-220

2014

  1. Structure and composition of Silicon-Germanium-Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy

    Microelectronic Engineering, Vol. 125, pp. 18-21

2013

  1. Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

    Journal of Applied Physics, Vol. 113, Núm. 20

  2. Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers

    Thin Solid Films, Vol. 536, pp. 147-151

2012

  1. Ciencia que conta

    Boletín das ciencias, Año 25, Núm. 76, pp. 165-167

  2. FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films

    Applied Surface Science

  3. Laser assisted formation of binary and ternary Ge/Si/Sn alloys

    Thin Solid Films

  4. Laser synthesis of germanium tin alloys on virtual germanium

    Applied Physics Letters, Vol. 100, Núm. 10

  5. Silicon germanium tin alloys formed by pulsed laser induced epitaxy

    Applied Physics Letters, Vol. 100, Núm. 20

2011

  1. FEM for modelling 193 nm excimer laser treatment of SiO2/Si/Si(1-x)Gex heterostructures on SOI substrates

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, Núm. 3, pp. 936-939

  2. Pulsed UV-laser processing of amorphous and crystalline group IV semiconductors

    ECS Transactions

2010

  1. Experimental and theoretical study of the Nd: YAG laser removal of beeswax on Galician granite at 355 nm

    Applied Physics A: Materials Science and Processing, Vol. 100, Núm. 3, pp. 741-746

  2. Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures

    Applied Physics Letters, Vol. 97, Núm. 1

  3. Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

    Thin Solid Films, Vol. 518, Núm. 9, pp. 2431-2436

  4. Numerical studies of temperature profile and hydrodynamic phenomena during excimer laser assisted heteroepitaxial growth of patterned silicon and germanium bi-layers

    Thin Solid Films, Vol. 518, Núm. 6 SUPPL. 1

2008

  1. Experimental determination of La2O3 thermal conductivity and its application to the thermal analysis of a-Ge/La2O3/c-Si laser annealing

    Thin Solid Films, Vol. 516, Núm. 21, pp. 7400-7405

  2. Numerical simulation of the UV-excimer laser assisted modification of amorphous hydrogenated Si/Ge bilayers to graded epitaxial heterostructures

    Thin Solid Films, Vol. 517, Núm. 1, pp. 222-226

2007

  1. Analysis of excimer laser annealing of amorphous SiGe on La 2 O 3 //Si structures

    Applied Surface Science, Vol. 253, Núm. 19, pp. 7957-7963

  2. Analysis of plume deflection in the silicon laser ablation process

    Applied Physics A: Materials Science and Processing, Vol. 88, Núm. 4, pp. 667-671

  3. Numerical analysis of Excimer laser assisted processing of multi-layers for the tailored dehydrogenation of amorphous and nano-crystalline silicon films

    Applied Surface Science, Vol. 254, Núm. 4, pp. 898-903